Journal

[82] Analysis of Key Factors for High Yield AMOLED Display

Author

Hojoong Kim, Chanhyuk Jung, Jang-Yeon Kwon*, and Songkuk Kim*

Journal

Journal of Display Technology
J. DISP. TECHNOL.

Vol / Page / Year

11 / 783 / 2015

[81] Effects of mechanical deformation on energy conversion efficiency of piezoelectric nanogenerators

Author

Jinho Yoo, Seunghyeon Cho*, Wook Kim, Jang-Yeon Kwon, Hojoong Kim, Seunghyun Kim, Yoon-Suk Chang, Chang-Wan Kim, and Dukhyun Choi*

Journal

Nanotechnology
Nanotechnology

Vol / Page / Year

26 / 275402 / 2015

[80] Reliability of Crystalline Indium-Gallium-Zinc Oxide Thin Film Transistors under Bias Stress with Light Illumination

Author

Kyung Park, Hyun-Woo Park, Hyun Soo Shin, Jonguk Bae, Kwon-Shik Park, Inbyeong Kang, Kwun-Bum Chung, and Jang-Yeon Kwon*

Journal

IEEE Transactions on Electron Devices
IEEE Trans. Electron Devices

Vol / Page / Year

62 / 2900 / 2015

[79] Influence of post-annealing on the off current of MoS2 field-effect transistors

Author

Seok Daniel Namgung, Suk Yang, Kyung Park, Ah-Jin Cho, Hojoong Kim, and Jang-Yeon Kwon*

Journal

Nanoscale research letters
Nanoscale Res. Lett.

Vol / Page / Year

10 / 62 / 2015

[78] A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors

Author

Ah-Jin Cho, Kee Chan Park, and Jang-Yeon Kwon*

Journal

Nanoscale research letters
Nanoscale Res. Lett.

Vol / Page / Year

10 / 115 / 2015

[77] Amorphous boron-indium-zinc-oxide active channel layers for thin-film transistor fabrication

Author

Shanmugam Parthiban and Jang-Yeon Kwon*

Journal

Journal of Materials Chemistry C
J. Mater. Chem. C

Vol / Page / Year

3 / 1661 / 2015

[76] Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

Author

Jang-Yeon Kwon and Jae Kyeong Jeong*

Journal

Semiconductor Science and Technology
Semicond. Sci. Technol.

Vol / Page / Year

30 / 24002 / 2015