International Patent


Issued

[23] US 7923722, "Thin film transistors and methods of manufacturing the same", 12.Apr.2011

[22] US 7871872, "Method of manufacturing thin film transistor having lightly doped drain regions", 12.Apr.2011

[21] US 7851802, "Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same", 14.Dec.2011

[20] US 7799625, "Organic electro-luminescent display and method of fabricating the same", 21.Sep.2010

[19] US 7799622, "Methods of manufacturing oxide semiconductor thin film transistor", 21.Sep.2010

[18] US 7772711, "Semiconductor device including single crystal silicon layer", 10.Aug.2010

[17] US 7767505, "Methods of manufacturing an oxide semiconductor thin film transistor", 03.Oct.2010

[16] US 7745314, "Method of degassing thin layer and method of manufacturing silicon thin film", 29.Jan.2010

[15] US 7709842, "Organic electroluminescent display and method of fabricating the same", 04.May.2010

[14] US 7700954, "Transistor, method of fabricating the same and organic light emitting display including the transistor", 20.Apr.2010

[13] US 7682950, "Method of manufacturing laterally crystallized semiconductor layer and method of manufacturing thin film transistor using the same method", 23.Mar.2010

[12] US 7682882, "Method of manufacturing ZnO-based thin film transistor", 23.Mar.2010

[11] US 7648866, "Method of manufacturing driving-device for unit pixel of organic light emitting display", 19.Jan.2010

[10] US 7638360, "ZnO-based thin film transistor and method of manufacturing the same", 29.Dec.2009

[9] US 7629205, "Thin film transistor having double-layered gate electrode and method of manufacturing the thin film transistor", 08.Dec.2009

[8] US 7563659, "Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same", 21.Jul.2009

[7] US 7479667, "Semiconductor device with modified mobility and thin film transistor having the same", 20.Jan.2009

[6] US 7439197, "Method of fabricating a capacitor", 21.Oct.2008

[5] US 7388594, "Electrostatic latent image forming medium, image forming apparatus including the electrostatic latent image forming medium and method of forming an electrostatic latent image", 17.Jun.2008

[4] US 7233022, "Thin film transistor including a polysilicon film", 19.Jun.2007

[3] US 7176488, "Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof", 13.Feb.2007

[2] US 6333214, "Memory of multilevel quantum dot structure and method for fabricating the same", 25.Dec.2001

[1] US 6194237, "Method for forming quantum dot in semiconductor device and a semiconductor device resulting therefrom", 27.Feb.2001


Filed

[25]US 2010-659153, "Thin-film transistor and method of manufacturing the same", 26.Feb.2010

[24] US 2009-591914, "Transistor, electronic device including a transistor and methods of manufacturing the same", 04.Dec.2009

[23] US 2009-453295, "Thin film transistor and method of manufacturing the same", 06.May.2009

[22] US 2009-453293, "Thin film transistor and method of manufacturing the same", 06.May.2009

[21] US 2009-320701, "Oxide semiconductor transistor and method of manufacturing the same", 02.Feb.2009

[20] US 2008-314516, "Display apparatuses and methods of fabricating the same", 11.Dec.2008

[19] US 2008-314212, "Poly-si thin film transistor and method of manufacturing the same", 05.Dec.2008

[18] US 2008-292595, "Apparatus for atomic layer deposition and method of atomic layer deposition using the same", 21.Nov.2008

[17] US 2008-219661, "Oxide semiconductor thin film transistors and fabrication methods thereof", 25.Jul.2008

[16] US 2008-213424, "Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same", 19.Jun.2008

[15] US 2008-153657, "Display devices including an oxide semiconductor thin film transistor", 22.May.2008
[14] US 2008-110744, "METHOD of MANUFACTURING ZnO-BASED THIN FILM TRANSISTOR", 28.Apr.2008

[13] US 2008-032007, "THIN FILM TRANSISTOR AND METHOD of MANUFACTURING THE SAME", 15.Feb.2008

[12] US 2007-877308, "DRIVING DEVICE FOR UNIT PIXEL of ORGANIC LIGHT EMITTING DISPLAY AND METHOD of MANUFACTURING THE SAME", 23.Sep.2007

[11] US 2007-756766, "THIN FILM TRANSISTOR FORMED ON FLEXIBLE SUBSTRATE AND METHOD of MANUFACTURING THE SAME", 01.Jun.2007

[10] US 2007-675132, "ORGANIC ELECTRO-LUMINESCENT DISPLAY AND METHOD of FABRICATING THE SAME", 15.Feb.2007

[9] US 2006-553693, "METHOD of FABRICATING POLYCRYSTALLINE SILICON FILM AND METHOD of FABRICATING THIN FILM TRANSISTOR USING THE SAME", 27.Sep.2006

[8] US 2006-498693, "Method of fabricating silicon thin film layer", 03.Aug.2006

[7] US 2006-455559, "Silicon thin film transistor and method of manufacturing the same", 19.Jun.2006

[6] US 2006-453537, "Display system using mobile communication terminal, method of displaying image, and computer program product", 15.Jun.2006

[5] US 2006-440249, "Organic light emitting display and method of fabricating the same", 24.May.2006

[4] US 2006-369947, "Thin film transistor with capping layer and method of manufacturing the same", 08.Mar.2006

[3] US 2006-350106, "Plastic substrate for display panel and method of manufacturing the same", 09.Feb.2006

[2] US 2006-322235, "Poly-crystalline silicon thin film transistor", 03.Jan.2006

[1] US 2005-174649, "Method of fabricating a poly-crystalline silicon thin film and method of fabricating a semiconductor device using the same", 06.Jul.2005


Domestic Patent



Issued

[6] 10-2093502, “생분해성 전계 효과 트랜지스터   제조 방법”, 2020

 

[5] 10-1991578, “수직 하중과전단 하중 비틀림 하중의 측정이 가능한 촉각 센서”, 2019

 

[4] 10-1888256, “펩타이드 기반의 물질을 포함하는 전계 효과 트랜지스터   제조방법”, 2018

 

[3] 10-1638978, "박막 트랜지스터   제조방법", 2016

 

[2] 10-0988084, "박막 트랜지스터 제조 방법", 2010

 

[1] KR 0988084, "다결정 실리콘 제조 방법", 2006


Filed 

[7] 10-2020-0018954, “멀티 입력 기반의 저항 변화 메모리 소자”, 2020

[6] 10-2018-0071966, “고신뢰성 금속 산화물 반도체 물질을 포함하는 박막 트랜지스터 기판”, 2015

[5] KR 2008-0020585, 
산화물 반도체 박막 트랜지스터의 소스 및 드레인 전극용에칭액 및 이를 이용한 산화물 반도체 박막 트랜지스터의 제조 방법, 2008

[4] KR 2008-0005854, 
선형 안테나를 구비한 플라즈마 처리 장치, 2008

[3] KR 2007-0118828, 
결정질 실리콘 박막 및 이를 적용하는 박막 트랜지스터의 제조 방법, 2007

[2] KR 2006-0010056, 
박막의 패터닝 방법, 2006

[1] KR 2005-0030285, 실리콘 박막트랜지스터실리콘 박막트랜지스터의 게이트절연층 형성 방법 및 이를 이용한 실리콘 박막트랜지스터의 제조 방법, 2005