International Conference


2020

[162] Min-Kyu Song, Seok Daniel Namgung, Daehwan Choi, Hyeohn Kim, Hongmin Seo, Misong Ju, Yoon Ho Lee, Taehoon Sung, Yoon-Sik Lee, Ki Tae Nam, Jang-Yeon Kwon*, “Proton-Controlled Bimodal Operation of Tyrosine-Rich Peptide Memristor”, Material Research Society (MRS), November 28 - December 4, 2020

[161] Min-Kyu Song, Seok Daniel Namgung, Daehwan Choi, Hyeohn Kim, Hongmin Seo, Misong Ju, Yoon Ho Lee, Taehoon Sung, Yoon-Sik Lee, Ki Tae Nam, Jang-Yeon Kwon*, “Proton-Controlled Bimodal Memristor Based on Tyrosine-rich Peptide”, International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), November 3, 2020


2019

[160] Min-Kyu Song, Seok Daniel Namgung, Taehoon Sung, Ki Tae Nam, Yoon-Sik Lee, Jang-Yeon Kwon*m “Rapidly Dissolvable Transient Field-Effect Transistors Based on Phosphorene”, Material Research Society (MRS), December 1-6, 2019

[159] Daehwan Choi, Taehoon Sung, and Jang-Yeon Kwon, “A self-powered smart rotation movement sensing system with a triboelectric nanogenerator roller-bearing”, Material Research Society (MRS), December 1-6, 2019

[158] Daehwan Choi, Wook Kim, Dukhyun Choi, and Jang-Yeon Kwon, “A Self-Powered Liquid Sensor Based on Triboelectric Generator and Microfluidic System”, The 4th International Conference on Active Materials and Soft Mechatronics (AMSM), October 16-19, 2019

[157] Young-Woong Song, Min-Kyu Song, Ah-Jin Cho, Seok Daniel Namgung, and Jang-Yeon Kwon, “Influence of O2 Annealing on Resistive Switching Behavior of MoS2-Based ReRAM”, 2019 International Conference on Nanospace Materials (ICNM),
October 1-4, 2019


2018

[156] Ah-Jin Cho, Min-Kyu Song, Dong-won Kang, and Jang-Yeon Kwon, "Two-dimensional semiconductor based transparent solar cell and its performance enhancement", Nano-Micro Conference, December 17-20, 2018 (Nano-Micro Science Innovation Award)

[155] Taehoon Sung, Kyung Park, Jong Heon Kim, Hyun-Woo Park, Pilsang Yun, Jiyong Noh, SeokWoo Lee, Kwon-Shik Park, SooYoung Yoon, InByeong Kang, Kwun-Bum Chung, Hyun-Suk Kim, and Jang-Yeon Kwon, "Enhancing Reliability of Amorphous In-Ga-Zn-O Thin Film Transistors by Nitrogen Doping", The 25th International Display Workshops (IDW), December 12-14, 2018
(Best Paper Award)

[154] Solah Park, Jang-Yeon Kwon, “Effects of X-Ray Irradiation on Amorphous Oxide Semiconductor Thin-Film Transistors”, Material Research Society (MRS), November 28, 2018

[153]
Seok Daniel Namgung, Min-Kyu Song, Taehoon Sung, Jaehun Lee, Misong Ju, Ki Tae Nam, Jang-Yeon Kwon, “Fast Dissolving Transient Electronics Incorporating Peptide Insulator”, Material Research Society (MRS), November 28, 2018

[152] Ah-jin Cho, Jang-Yeon Kwon "Evaluation of a WSe2/MoS2 Heterojunction in the Perspective of a Transparent Thin-film Solar Cell", Recent Progress in Graphene & 2D Materials Research(RPGR), October 22-25, 2018

[151] Jang-yeon Kwon, "The enhanced electrical and optical properties of CVD grown MoS2 film",  International Conference on Energy, Materials and Nanotechnology (EMN) Barcelona Meeting, September 10-14, 2018

[150] Daehwan Choi and Jang-Yeon Kwon, "A Highly Sensitive Tactile Sensor Using a Pyramid-Plug Structure for Detecting Pressure, Shear Force, and Torsion", European Materials Research Society (E-MRS) fall, 09.17.~20., 2018

[149] Min-Kyu Song, Seok Daniel Namgung, Taehoon Sung, Jaehun Lee, Misong Ju, Ki Tae Nam, Yoon-Sik Lee, Jang-Yeon Kwon, “Biodegradable and Biocompatible Black Phosphorus Field Effect Transistors for Green Electronics”, 15th International Conference on Nanosciences & Nanotechnologies (NN18), 3-6 July, 2018

[148] Seok Daniel Namgung, Jaehun Lee, Taehoon Sung, Hyung-Jun Kim, Ah-Jin Cho, Sungjoon Koh, Junghyun An, Ik Rang Choe, Ki Tae Nam and Jang-Yeon Kwon, “Work Function Controlled Polydopamine-Copper Hybrid Films for Source and Drain of Oxide Semiconductor Field Effect Transistor”, European Materials Research Society (E-MRS) spring, June. 19th 2018


[147] Ah-Jin Cho and Jang-Yeon Kwon, “Two-dimensional WSe2/MoS2 p-n heterojunction based transparent PV cell and its performance enhancement by passivation”, World Conference on Photovoltaic Energy Conversion (WCPEC-7), June 10th-15th , 2018


2017

[146] “Triboelectrification and Dielectric Behavior Based Chemical Sensor for Distinguishing Liquids and Impurities in Microfluids”, The 4th International Conference on Advanced Electromaterials, 2017.11.21.~24.

[145] “Analysis of positive materials and effect of Electric double layers in Triboelectric nanogenerator”, 14th International conference on Flow Dynamics, 2017.11.01.~3.

[144] Daehwan Choi, Sukjin Jang, Eunsong Jee, Do Hwan Kim, and Jang-Yeon Kwon, "A Highly Sensitive Pressure and Torsion Sensor with Ionic Gel", ICFPE 2017, 2017 09.04.~07.

[143] Sukjin Jang, Daehwan Choi, Wook Kim, Eunsong Jee, Dukhyun Choi, Do Hwan Kim, and Jang-Yeon Kwon, "High Sensitive Piezo-capacitive Pressure Sensor in Real Skin Sensing Range, ICFPE 2017, 2017 09.04.~07.


[142] “Microfludic system integrated triboelectric sensor for detecting liquids and impurity solution”, KIEEME Annual Summer Conference, 2017.06.21.~23.

[141] Daehwan Choi, Wook Kim, Dukhyun Choi and Jang-Yeon Kwon, "Self-Powered Triboelectric Sensor with Microfluidic System for Detection of Liquids", Creative ICT Convergence KOREA 2017, 2017 05.24.~27.

[140] Hyun-Woo Park, Kwun-Bum Chung, Dukhyun Choi, and Jang-Yeon Kwon, “Improvement of electrical device properties of homojunction interface in tungsten doped IZO thin film transistor”, E-MRS 2017 spring meeting, 2017.05.22.~26.

[139] Solah Park, Kyung Park, Ho-joong Kim, Jang-Yeon Kwon, "Highly Reliable Devices Using Crystalline-Indium-Tin-Zinc-Oxide Thin Film Transistors", MRS spring, Apr, Phoenix, USA.

[138] Ah-Jin Cho, Kyung Park, Solah Park, Min-Kyu Song, Kwun-Bum Chung and Jang-Yeon Kwon, " Transparent Solar Cell Utilizing p-n Heterojunction of Two-Dimensional GaTe and InGaZnO", MRS spring, Apr, Phoenix, USA.

[137] Taehoon Sung, Seok
Daniel Namgung, Jaehun Lee, Ik Rang Choe, Ki Tae Nam, and Jang-Yeon Kwon, “Ion-induced High-k Dielectric Property of Peptide Insulator” AMN8, 2. Feb, Queenstown, New Zealand


2016

[136] “The effects of interface engineering on output performance of triboelectric nanogenerator”, European Materials Research Society 2016 Fall, September 19th~22nd

[135] Min-Kyu Song, Ah-Jin Cho, Hyung-Jun Kim, and Jang-Yeon Kwon, "Systematic Analysis of Passivation and Annealing Effects on Degradation of Electrical Performance of Black Phosphorous FETs" MNC, November 8th~11st, Kyoto, Japan

[134] Jang-yeon Kwon, "The electrical Characteristics of Transition Metal Dichalcogenides(TMDs) Field Effect Transistor and Inverter", NST 2016, Singapore, Oct 26th~28


[133] Yunjin-Park,Hyungiun Kim and Jang-Yeon Kwon,"Analysis of Humidity Effects on Electrical Performance of MoS2 TFT Device." IMID 2016, Jeju, August 23rd ~ August 26th

[132] Sung-Joon Koh,Seok Daniel Namgung,Junghyun An,Jaehun Lee,Lk Rang Choe,Ki Tae Nam and Jang-Yeon Kwon,"Metal-doped Protein Pyrolysis Effects on InGaZnO Field Effect Transistors" IMID 2016, Jeju, August 23rd ~ August 26th

[131] Young-Woong Song, Ah-Jin Cho and Jang-Yeon Kwon,"Analysis on the Performance of Photodetector Based on the Band Structure of 2D Material Active Layer" IMID 2016, Jeju, August 23rd ~ August 26th

[130] Seok Daniel Namgung,Junghyun An,Jaehun Lee,Ik Rang Choe,Ki Tae Nam and Jang-Yeon Kwon,"Pyrolysis Temperature Effects on Polydopamine Source and Drain of Field Effect Transistor" NN16 July03~July08,Greece

[129] Hyung-Jun Kim,Suk-Yang,Hojoong Kim,Kyung Park,Ah-Jin Cho and Jang-Yeon Kwon, "Enhanced electrical performance by atomic diffusion of aluminum in chemical vapor deposited monolayer MoS2 field effect transistors" NN16 July03~July08,Greece

[128] Ah-Jin Cho and Jang-Yeon Kwon, “Electrical and Photovoltaic Characteristics of a Multi-layer GaTe/IGZO p-n Heterojunction” NN16 July03~July08,Greece


2015

[127] Kyung Park, Hyun Soo Shin, Jonguk Bae,and Jang-yeon Kwon,"A study on the Thickness Dependence of Crystalline Indium-Gallium-Zinc-Oxide Thin Film Transistors on Device Performance",PACRIM11,August30~Sept04,Jeju

[126] Solah Park, Kyung Park, and Jang-Yeon Kwon," Electrical Instability of Indium-Tin-Zinc-Oxide Thin Film Transistors Fabricated for Various Oxygen Partial Pressures and Post-Annealing Temperatures",PACRIM11,August30~Sept04,Jeju

[125] Geonho Kim, Ah-Jin Cho, and Jang-Yeon Kwon, "The Effect of Various Passivation Layers to the Stability of the MoS2 Field-Effect Transistor", IMID2015,August18-21,Daegu 


[124] Ah-jin Cho, Kee chan Park, Kwon Jang-Yeon, Transition Metal Dichalcogenide Field-effect Transistors Based High-gain Complementary Inverter NN15, July4-11,Greece 


[123] Solah Park, Kyung Park, Kwon Jang-Yeon, Electrical Properties of amorphous Indium-Tin-Zinc-Oxide Thin Film Transistors for Post-Annealing, NN15, July4-11,Greece

 

[122] Kyung Park, Hyun Soo Shin, Jonguk Bae, Jang-Yeon Kwon,A Study on the Characteristics of Crystalline Indium-Gallium-Zinc-Oxide Thin Film Transistors,SID 2015,May-June6 Sanjose

 

[121] Hojoong kim, Chanhyuk Jung, Jang-Yeon Kwon and Songkuk Kim,An Empirical Analysis of effect Factors for High Reliability on AMOLED Display SID 2015,May-June6 Sanjose

 

[120] kyung park, Hyun Soo Shin, Jonguk Bae, Jang-Yeon Kwon,Reliability of Poly-crystalline Indium-Gallium-Zinc-Oxide Thin Film Transistors under Bias and Light Illumination Stress,April4-10 Sanfrancisco


2014

[119] Kwon Jang-Yeon,kyung park,Hyeon-soo Park,Jong-wook Park,Reliability of Poly-crystalline Indium-Gallium-Zinc-Oxide Thin Film Transistors under Bias and Light Illumination Stress,KJ-Seramics 31,Nov.26-29 2014, Changwon

[118] Do-Joong Lee, Jang-Yeon Kwon, Soo-Hyun Kim, Hyun-Mi Kim, Jimmy Xu, and Ki-Bum Kim, "Doping Mechanism in Transparent Conductive ZnO Films Grown by Atomic Layer Deposition", ECS and SMEQ, Oct. 5-10, 2014, Mexico

[117] Sukjin Jang, Kyung Park and Jang-Yeon Kwon,
Instability under various wavelength characteristics in fully transparent Indium-Gallium-Zinc oxide thin-film-transistor", 40th Micro and Nano Engineering(MNE), Sept 22-26,2014, Lausanne, Switzerland


[116] Ah-Jin Cho, Suk Yang, Kyung Park, Seok Daniel Namgung, Hojoong Kim and Jang-Yeon Kwon, Hysteresis reduction of multi-layer MoS2 field effect transistor by using atomic layer deposition Al2O3 as gate insulator, 40th Micro and Nano Engineering(MNE), Sept 22-26,2014, Lausanne, Switzerland


[115] Seok Namgung, Suk Yang, Kyung Park, Ah-Jin Cho, Hojoong Kim and Jang-Yeon Kwon, Post-annealing effects on off-current of MoS2 Field Effect Transistor, 40th Micro and Nano Engineering(MNE), Sept 22-26,2014, Lausanne, Switzerland


[114] Kwon Jang-Yeon,Yang Suk,Park Solah,Jang Sukjin,Kim HoJoong,"Electrical stability of multilayer MoS2 field-effect transistor under negative bias stress at various temperatures",IMID 2014,Aug.26-29,Daegu


[113] Jeong-Soo Lee,Seung-Min Song,Soo-Yeon Lee,Yong-Hoon Kim,Kwon Jang-Yeon,Min-Koo Han,"Effects of Composition Ratio on Solution-processed InGaZnO Thin-Film Transistors",223rd ECS Meeting,May.12-16,Canada

[112] Suk Yang, Solah Park, Ah-Jin Cho, Seok Namgung, and Jang-Yeon Kwon, "Electrical and thermal stability multilayer MoS2 FET under negative bias stress", Materials Research Society (MRS), Apr. 21-25, 2014, San Francisco, USA



2013

[111] [Invited] Jang-Yeon Kwon, "Role of a carrier suppressor dopant in amorphous metal oxide semiconductor for high performance thin film transistor", Energy Materials Nanotechnology(EMN), Dec.7-10, 2013, Orlando, USA
 
[110] Shanmugam Parthiban and Jang-Yeon Kwon, "High Lewis acid strength carbon incorporated as carrier suppressor and strong binder into amorphous indium zinc oxide TFT", International Conference on Advanced Electromaterials (ICAE), Nov. 12-15, 2013, Jeju, Korea

 

[109] Hojoong Kim, Suk Yang, Kyung Park, Parthiban Shanmugam, Jang-Yeon Kwon Leakage Current Analysis Depends on Grain Size Variation in Zinc Oxide Thin Film Transistor, ECS Meeting, Nov. 1, San Francisco, California, 2013, USA

 

[108] Parthiban Shanmugam, Hojoong Kim, Suk Yang, and Jang-Yeon Kwon, Carbon-doped a-InZnO thin film transistors processed at 150 °C with high performance and stability, The international conference on flexible and printed electronics, Sep. 13, 2013, Korea

 

[107] Hojoong Kim, Suk Yang, Parthiban Shanmugam, and Jang-Yeon Kwon, Leakage current analysis depends on various grain sizes of zinc oxide thin film transistor, The international conference on flexible and printed electronics, Sep. 13, 2013, Korea

 

[106] Chul-Kyu Lee, Ho-Joong Kim, Chang-Kyu Lee, Byeong Geun Son, Hyo-Jin Kim, Ju-Kyung Han, Seung-Hyuk Lee, Seong-Bae Kim, Jang-Yeon Kwon, and Jae Kyeong Jeong, "High Performance Zinc Tin Oxide TFTs with a Soluble Processed Cu Source/Drain Electrode", International Meeting on Information Display (IMID 2013), Aug. 27-29, 2013, Korea  
 

[105] Ah-Jin Cho, Suk Yang, Hojoong Kim, Seok Daniel Namgung, and Jang-Yeon Kwon, The correlation between electrical property of gate insulator and performance of the MoS2 FET, International Meeting on Information Display (IMID 2013), Aug. 29, 2013, Korea

 

[104] Seok Daniel Namgung, Suk Yang, Hojoong Kim, Ah-Jin Cho, and Jang-Yeon Kwon, Influence of annealing process on MoS2 FET performance, International Meeting on Information Display (IMID 2013), Aug. 27-29, 2013, Korea 

 

[103] Shanmugam Parthiban, Kyung Park, Hojoong Kim, Suk Yang, and Jang-Yeon Kwon, IV-group Element Incorporated Amorphous Indium Zinc Oxide Thin-film Transistor, International Conference on Materials for Advanced Technologies (ICMAT 2013), June. 30, 2013, Singapore


2012

[102] Seung-Min Song, Jeong-Soo Lee, Dong-Won Kang, Jang-Yeon Kwon and Min-Koo Han, "Effects of Solution-Processed Al2O3 Gate Insulator Thickness on IGZO TFTs", 19th IDW, Kyoto, Japan, December 4-7, 2012

 

[101] Jeong-Soo Lee, Seung-Min Song, Dong-Won Kang, Yong-Hoon Kim, Jang-Yeon Kwon and Min-Koo Han, "Improvement of Solution-processed Oxide Thin-Film Transistors by Ultra-Violet Treatment", PRiME 2012, pp. 3050, Honolulu, Hawaii, October 7-12, 2012

 

[100] Suk Yang, Hojoong Kim, and Jang-Yeon Kwon, The Effect of Illumination under the Bias Stress of Transparent Thin Film Transistors, International Conference on Electronic Materials and Nanotechnology fir Green Environment(ENGE), Sep. 16-19, 2012, Korea 
 

[99] Suk Yang, Hojoong Kim, and Jang-Yeon Kwon, The Effect of Illumination under the Bias Stress of Transparent Thin Film Transistors, International Meeting on Information Display (IMID 2012), Aug. 29-31, 2012, Korea

 

[98] Jeong-Soo Lee, Seung-Min Song, Seung-Hwan Cho, Moon-Kyu Song, Yong-Hoon Kim, Jang-Yeon Kwon, and Min-Koo Han,"Excimer Laser Annealed Low Temperature Solution-processed Oxide Thin Film Transistors", AMFPD 2012, Kyoto, Japan, July 4-6, 2012.

 

[97] [Invited]Jang-Yeon kwon, Potential applications and current issues of oxide semiconductor thin film transistor, International Conference of Young Researchers on Advanced Materials (ICYRAM), July. 1-6, 2012, Singapore


2011

[96] Seung-Hwan Cho, Jeong-Soo Lee, Seung-Min Song, Jang-Yeon Kwon, and Min-Koo Han, "Self-Assembled Monolayer Modified Back Interface of Oxide Semiconductor as a Protection Layer", 18th IDW, Nagoya, Japan, Dec. 7-9, 2011  
 

[95] Jeong Soo Lee, Sung-Hwan Choi, Seung-Hee Kuk, Moon-Kyu Song, Yong-Hoon Kim, Jang Yeon Kwon, Min Koo Han, "Dechlorination and Crystallization of Solution-processed Zinc Tin Oxide Thin Film Transistor With Various Annealing Temperature", 18th IDW, Nagoya Congress Center, Nagoya, Japan, December 7-9, 2011 
 

[94] Seung-Hee Kuk, Binn Kim, Soo-Jeong Park, Juhn-Suk Yoo, Jang-Yeon Kwon and Min-Koo Han, "High Drain Field Induced Degradation in Indium-Gallium-Zinc-Oxide Thin Film Transistor", MRS fall 2011, Boston, USA, Nov 28 - Dec 2, 2011


[93] Sun-Jae Kim, Soo-Yeon Lee, Young-Wook Lee, Jang-Yeon Kwon and Min-Koo Han, "The Reliability of Indium-Gallium-Zinc Oxide Thin Film Ttransistors under Ambient and Vacuum", MRS fall 2011, Boston, USA, Nov 28 - Dec 2, 2011 
 

[92] Jeong-Soo Lee, Yong-Uk Lee, Seung-Min Song, Yong-Hoon Kim, Jang-Yeon Kwon and Min-Koo Han,"Effects of O2 and H2 Plasma Treatment on Solution-Processed Zinc Tin Oxide Thin-Film Transistors with 300'C Low Annealing Temperature", AM-FPD'11, Kyoto, Japan, p.153-156, July 11 - 13, 2011. 
 

[91] Sun-Jae Kim, Young-Wook Lee, Soo-Yeon Lee, Jong-Suk Woo, Jang-Yeon Kwon, Min-Koo Han, Woo-Geun Lee, Kap-Soo Yoon, Young-Wook Lee, "The Effect of AC Bias Frequency on Threshold-Voltage Shift of the Amorphous Oxide TFTs", SID'11, pp. 1195, Los Angeles, USA, May, 2011

 

[90] Soo-Yeon  Lee, Sun-Jae Kim, Young Wook Lee, Woo-Geun Lee, Kap-Soo Yoon, Jang-Yeon Kwon, and Min-Koo Han, "Reliability of Oxide Thin Film Transistors under the Gate Bias Stress with 400 nm Wavelength Light Illumination", MRS 2011, Sanfrancisco, USA, Apr 25-29, 2011 
 
 

[89] Young Wook Lee, Sung-Hwan Choi, Jeong-Soo Lee, Jang-Yeon Kwon, and Min-Koo Han, "Investigation of Amorphous IGZO TFT Employing Ti/Cu Source/Drain and SiNx Passivation", MRS 2011, Sanfrancisco, USA, Apr 25-29, 2011

 

[88] Soo-Yeon Lee, Seung-Min Song, Moon-Kyu Song, Woo-Geun Lee, Kap-Soo Yoon, Jang-Yeon Kwon, Min-Koo Han, "The light response characteristics of oxide-based thin film transistors", ICECECE 2011, Apr. 2011 
 

[87] Jeong-Soo Lee, Yong-Uk Lee, Seung-Hwan Cho, Seung-Min Song, Yong-Hoon Kim, Jang-Yeon Kwon, Min-Koo Han, "Improvement of Electrical Characteristics of Low Temperature Solution-processed Zinc Tin Oxide Thin Film Transistors by O2 Plasma treatment", Material Research Society, Apr. 2011



2010

[86] Sun-Jae Kim, Soo-Yeon Lee, Jang-Yeon Kwon, Woo-Geun Lee, Kap-Soo Yoon, Young-Wook Lee, Min-Koo Han, "Effect of Active Layer Thickness on the Indium-Gallium-Zinc-Oxide TFTs", International Display Workshop, Dec. 2010

 

[85] Soo-Yeon Lee, Sun-Jae Kim, Young-Wook Lee, Sang-Geun Park, Jang-Yeon Kwon, Min-Koo Han, "The stability of oxide TFTs under electrical gate bias and monochromatic light illumination", The Electrochemical Society Meeting, Oct. 2010

 

[84] Jeong-Soo Lee, Yong-Jin Kim, Yong-Uk Lee, Seung-Hwan Cho, Yong-Hoon Kim, Jang-Yeon Kwon, Min-Koo Han, "Low Temperature Solution-Processed Zinc Tin Oxide Thin Film Transistor with O2 Plasma Treatment", Electrochemical society meeting, Oct. 2010

 

[83] Sung-Hwan Choi, Young-Wook Lee, Jang-Yeon Kwon, Min-Koo Han, "Passivation Layer for Improvement of Reliability In Amorphous Indium Gallium Zinc Oxide Thin Film Transistors (TFTs)",SSDM10, Sep. 2010


[82] Seung-Hee Kuk, Dong-Won Kang, Jeong-Soo Lee, Sun-Jae Kim, Jang-Yeon Kwon, Min-Koo Han, "Short Channel Effect of Indium-Gallium-Zinc-Oxide Thin Film Transistors", SSDM10, Sep. 2010 


[81] Sung-Hwan Choi,Young-Wook Lee,Jang-Yeon Kwon,Min-koo Han, Novel passivation layer for improvement of Reliability in Amorphous Indium Gallium Zinc Oxide Thin Film Transistors (TFTs), SSDM10, Sep. 2010


2009

[80] [Invited] "Transparent display by oxide semiconductor TFT", FPD international, Jan. 2009

 

[79] "Improvement of bias stability and transfer characteristics by using double gate GaInZnO TFTs",Eurodisplay, Aug. 2009

 

[78] [Invited] "The potential application of oxide thin film transistor for active matrix display", ULSI vs TFT conference, Aug. 2009


2008

[77] [Invited] "Oxide TFT for active matrix display: From mobile to large size TV", FPD international, Nov. 2008

 

[76] [Invited] "Oxide TFT for active matrix display", Taiwan Display conference, Sep. 2008  
 

[75] [Invited] "GaInZnO TFT for active matrix display", Active Matrix Flat Panel Display, Sep. 2008


[74] "Stability improvement of gallium indium zinc oxide thin film transistors by post-thermal annealing", The Electrochemical Society Meeting, May. 2008  
 

[73] Sun-Jae Kim, Sang-Myeon Han, Jang-yeon Kwon, Ji-Sim Jung, and Min-Koo Han, "Highy stable bottom gate nanocrystalline silicon thin film transistor fabricated employing ICP CVD",The Electrochemical Society Meeting, May. 2008

 

[72] "4inch QVGA AMOLED driven by threshold voltage controlled amorphous GIZO (Ga2O3-In2O3-ZnO) TFT", Society Information Display, Mar. 2008 
 

[71] "Oxide TFT for active matrix display", Nikkei Electronics, Jan. 2008


2007

[70] "Bottom gate GaInZnO TFT array for high resolution AMLCD/AMOLED TV", International Thin Film Transistor Conference, Dec. 2007

 

[69] "4inch QVGA AMOLED display driven by GAInZnO TFT", International Display Workshop, Aug. 2007 
 

[68] Jang-Yeon Kwon, Kyoung Seok Son, Ji-sim Jung, Tae Sang Kim, Myung Kwan Ryu, Kyung Bae Park, Jung Woo Kim, Young Gu Lee, Young Soo Park and Sang-yoon Lee, "4inch QVGA AMOLED display driven by GAInZnO TFT", International Meeting on Information Display, May. 2007

 

[67] "2.2inch qqVGA AMOLED drived by a-Si:H TFT with active laser deposited at room temperature",Society Information Display, Apr. 2007

 

[66] "Nanocrystalline Si film fabricated by inductivity coupled plasma chemical vapor deposition at room temperature for thin film transistor", Material Research Society, Apr. 2007
 


2006

[65] "Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition", Material Research Society, Aug. 2006

 

[64] "Ultra low sheet resistance on poly silicon film by excimer laser activation", International Meeting on Information Display, Aug. 2006  
 

[63] "Laser crystallization of a-Si:H film prepared at ultra low temperature(<150oC) Catalytic CVD",International Meeting on Information Display, Aug. 2006  
 

[62] "Low temperature processes of poly-Si TFT backplane for flexible AMOLEDs", International Meeting on Information Display, Aug. 2006

 

[61] [Invited] Jang Yeon Kwon, Ji Sim Jung, Kyung Bae Park, Jong Man Kim, Hyuck Lim, Sang Yoon Lee, Jong Min Kim, "2.2inch qqVGA AMOLED drived by Ultra Low Temperature poly Silicon(ULTPS) TFT direct fabricated below 200oC", International Meeting on Information Display, Aug. 2006  
 

[60] Chul-Lae Cho, Sung-Hyun Lee, Chang Hoon Lee, Dea-Hyun Lee, Sang-Yoon Lee, Jang-Yeon Kwon, Kyung-Bae Park, Jong-Man Kim, Jisim Jung, Wan-Shick Hong, "50nm thick as-deposited nanocrystalline silicon film prepared below 200oC using catalytic chemical vapor deposition for flexible TFTs", International Meeting on Information Display, Aug. 2006

 

[59] "Reliability analysis of ultra low temperature Poly-Si thin film transistors", Active Matrix Flat Panel Display, Jul. 2006

 

[58] [Invited] "High quality gate oxide formed by ICp CVD for ULTPS TFT on plastic substrate", Active Matrix Flat Panel Display, Jul. 2006