[75] Electrical stability of multilayer MoS2 field-effect transistor under negative bias stress at various temperatures

Author

Suk Yang, Solah Park, Sukjin Jang, Hojoong Kim, and Jang-Yeon Kwon*


Journal

Physica Status Solidi (RRL): Rapid Research Letters
Phys. Status Solidi RRL


Vol / Page / Year

8 / 714 / 2014


[74] Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

Author

P. Dharmaraj, K. Jeganathan*, S. Parthiban, J. -Y. Kwon, S. Gautam, K. H. Chae, and K. Asokan


Journal

Applied Physics Letters
Appl. Phys. Lett.


Vol / Page / Year

105 / 181601 / 2014


[73] Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors

Author

S. PARTHIBAN, K. PARK, H.-J. KIM, S. YANG, and J.-Y. KWON*


Journal

Journal of Electronic Materials
J. Electron. Mater.


Vol / Page / Year

43 / 4224 / 2014


[72] Photocatalytic dye degradation properties of wafer level GaN nanowires by catalytic and self-catalytic approach using chemical vapor deposition

Author

V. Purushothaman, S. Prabhu, K. Jothivenkatachalam, S. Parthiban, J. -Y. Kwon, and K. Jeganathan*


Journal

RSC Advances
RSC Adv.


Vol / Page / Year

4 / 25569 / 2014


[71] Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

Author

Shanmugam Parthiban and Jang-Yeon Kwon*


Journal

Journal of Materials Research
J. Mater. Res.


Vol / Page / Year

29 / 1585 / 2014


[70] Effects of post-annealing temperature on carbon incorporated amorphous indium-zinc-oxide thin-film transistors fabrication using sputtering at room temperature

Author

Shanmugam Parthiban and Jang-Yeon Kwon*


Journal

RSC Advances
RSC Adv.


Vol / Page / Year

4 / 21958 / 2014


[69] Sputtered Deposited Carbon-Indium-Zinc Oxide Channel Layers for Use in Thin-Film Transistors

Author

Shanmugam Parthiban, Soo-Hyun Kim, and Jang-Yeon Kwon*


Journal

IEEE Electron Device Letters
IEEE Electron Device Lett.


Vol / Page / Year

35 / 1028 / 2014


[68] Multi-layer MoS2 FET with small hysteresis by using atomic layer deposition Al2O3 as gate insulator

Author

Ah-Jin Cho, Suk Yang, Kyung Park, Seok Daniel Namgung, Hojoong Kim, and Jang-Yeon Kwon*


Journal

ECS Solid State Letters
ECS Solid State Lett.


Vol / Page / Year

3 / Q67 / 2014